Reactor system and method to reduce residue buildup during a film deposition process

ABSTRACT

A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of, and claims priority to and the benefit of, U.S. patent application Ser. No. 15/402,993, filed Jan. 10, 2017 and entitled “REACTOR SYSTEM AND METHOD TO REDUCE RESIDUE BUILDUP DURING A FILM DEPOSITION PROCESS,” which is hereby incorporated by reference herein.

FIELD OF INVENTION

The disclosure generally relates to gas-phase deposition methods and systems. More particularly, exemplary embodiments of the present disclosure relate to methods of and systems for mitigating residue formation during a deposition process within a gas-phase deposition chamber.

BACKGROUND OF THE DISCLOSURE

During various gas-phase deposition processes, residue, formed of, for example, reaction products, reaction byproducts, and/or reactants used in film deposition processes, can deposit or condense onto an interior surface of walls of a reaction chamber. For example, in silicon epitaxial processes that use one or more chlorosilanes, such as dichlorosilane, as a precursor, significant residue typically condenses or otherwise deposits on an interior surface of the reaction chamber.

To facilitate a deposition process, heat is often supplied to a reaction space by providing lamps outside the reaction space (e.g., outside the walls of the reaction chamber) to provide thermal radiation to the reaction space through at least a portion of the reaction chamber wall that is transparent to the radiation emitted from the lamps. Additional heat can be supplied to a substrate on which material is being deposited by directly heating a susceptor on which the substrate is placed.

A temperature of the reaction space can be controlled by measuring a temperature of a susceptor and adjusting an amount of radiation emitted from the lamps and/or an amount of heat supplied to the susceptor. As residue builds up on the interior surface of the reaction chamber walls, transmission of radiation through the walls is reduced. As a result, the temperature of the susceptor and substrate are reduced. To compensate for the reduced temperature that is measured at the susceptor, an amount of radiation provided by the lamps is increased. As a result of the increased radiation, a thickness of material deposited on the substrate generally increases. This often manifests in increased film thickness measurements with each run or substrate processed.

An etch process after each run is typically used to remove residue that forms on the reactor wall to thereby mitigate run-to-run variations in film thickness. However, adding a etch step to a deposition process after each deposition run increases total process time associated with the deposition process, decreases throughput, and increases capital and operating costs associated with the deposition process. Additionally, the etch processes used to removed residue from reactor walls are typically run at relatively high temperatures—e.g., higher than deposition process temperatures. As a result, yet further additional time is often required to increase the reaction chamber to a desired temperature for the etch process and then decrease the reaction chamber temperature to the desired deposition process temperature. Although this process works relatively well to stabilize run-to-run film thickness on substrates, the etch processes adds considerable time and complexity to a deposition process. Accordingly, improved methods and systems for mitigating residue buildup in a reaction chamber are desired.

SUMMARY OF THE DISCLOSURE

Various embodiments of the present disclosure provide an improved method and system for mitigating the formation of residue on reactor walls of a deposition reactor. As set forth in more detail below, exemplary embodiments of the disclosure relate to controlling a temperature of an exterior wall surface of a reaction chamber to thereby mitigate the formation of residue on an interior wall surface during a film deposition process. By mitigating the formation of unwanted residue on the interior wall surface of a reaction chamber, more process runs and/or more substrates can be processed in the deposition reactor, without requiring an etch process to remove residue from the reaction chamber walls, while maintaining desired control of film thickness of deposited films. As a result, substrate throughput of the deposition reactor is increased and the operating costs of the reactor are decreased.

In accordance with exemplary embodiments of the disclosure, a method of depositing a material onto a substrate includes the steps of: providing a deposition reactor comprising a reaction chamber comprising a wall having an interior wall surface adjacent a reaction space and an exterior wall surface, measuring a temperature of the exterior wall surface—e.g., using a pyrometer, and adjusting a temperature of the exterior wall surface based on a temperature measured during the step of measuring. In accordance with various aspects of these embodiments, the temperature of the exterior wall surface is controlled using a convective medium such as air, which may include ambient air and/or air that is exposed to a cooler (e.g., a chiller), such as tubes or other conduits including a cooling medium, such as water. By way of example, the temperature of the exterior wall surface can be controlled by controlling a rate of convective medium flow (e.g., by adjusting a blower speed), controlling a temperature and/or flow rate of cooling medium, or combinations thereof. In accordance with various aspects of these embodiments, a thickness of the wall is relatively thin (e.g., about 2 mm to about 12 mm), so that the temperature measured of the exterior wall surface is approximately the same as the temperature of the interior wall surface. The method can be used to deposit a layer comprising silicon onto a surface of a substrate using, for example, chlorosilane, dichlorosilane, and/or other chlorosilanes.

In accordance with additional exemplary embodiments of the disclosure, a method of depositing a material on a surface of substrate within a deposition reaction chamber includes the steps of: providing a deposition reactor comprising a reaction chamber comprising a wall, having an interior wall surface adjacent a reaction space and an exterior wall surface, a housing, and a region between the exterior wall surface and the housing, measuring a temperature of the exterior wall surface, and based on the step of measuring, adjusting a flow rate of a convective medium within the region or otherwise controlling a temperature of the exterior wall surface. In accordance with various aspects of these embodiments, the exterior wall surface temperature is controlled to a temperature range, for example about 50° C. to about 90° C. below a decomposition temperature (e.g., a temperature at which less than 10 Å/minute of film growth occurs) of one or more precursors used to deposit a film (e.g., about 560° C. to about 600° C., about 565° C. to about 610° C., about 570° C. to about 600° C., or about 575° C. to about 595° C., or about 580° C. to about 600° C. when, e.g., a precursor includes dichlorosilane) to mitigate residue formation and/or buildup. In accordance with exemplary aspects of these and other embodiments, the method can additionally include controlling a temperature of a susceptor, controlling a temperature of a cooling medium, and/or controlling a flowrate of the cooling medium.

In accordance with yet further exemplary embodiments of the disclosure, a deposition reactor system includes a reaction chamber comprising a wall having an interior wall surface adjacent a reaction space and an exterior wall surface, a housing comprising an interior housing surface about (e.g., enclosing) the exterior wall surface, a region between the exterior wall surface and the interior housing surface, a convective medium within the region, a device, such as a blower, configured to cause movement of the convective medium within the region and relative to the exterior wall surface, and a controller configured to control a speed of the device, e.g., blower, in response to a measured temperature of the exterior wall surface. In accordance with exemplary aspects of these embodiments, the reaction chamber is an epitaxial deposition reaction chamber. In accordance with further aspects, the reaction chamber comprises quartz (e.g., having a thickness of between about 2 mm and about 12 mm). In accordance with further aspects, the deposition reactor system comprises a remote (e.g., non-contact) temperature sensor, such as a pyrometer (e.g., a pyrometer that detects the black-body radiation from the quartz at a wavelength where the quartz is opaque and therefore free of the noise from any transmitted stray light, such as 5.2 microns) to measure the temperature of the exterior wall surface.

Both the foregoing summary and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure or the claimed invention.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

A more complete understanding of the embodiments of the present disclosure may be derived by referring to the detailed description and claims when considered in connection with the following illustrative figures.

FIG. 1 illustrates a deposition reactor system in accordance with various exemplary embodiments of the disclosure.

FIG. 2 illustrates a method in accordance with exemplary embodiments of the disclosure.

FIG. 3 illustrates mean film thickness difference (delta) between films deposited on a 25^(th) substrate and a 1^(st) substrate at exterior wall surface temperatures with no intervening etch processes.

FIG. 4 illustrates film thickness measurements of a plurality of substrates processed using separate deposition runs, with no intervening etch processes.

FIGS. 5-6 and 8-10 illustrate deposited film thickness measurements at different exterior wall surface controlled temperatures.

FIG. 7 illustrates film thickness variation with no control of exterior wall surface temperatures.

FIG. 11 illustrates a controller in accordance with exemplary embodiments of the disclosure.

It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE INVENTION

The description of exemplary embodiments of methods and systems provided below is merely exemplary and is intended for purposes of illustration only; the following description is not intended to limit the scope of the disclosure or the claims. Moreover, recitation of multiple embodiments having stated features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the stated features.

The methods and systems described herein can be used to mitigate formation of residue on an interior surface of a reaction chamber wall during a film deposition process. Use of the methods and systems described herein results in higher throughput and in a lower cost of operation of deposition reactors, compared to systems and methods that do not employ the techniques described herein.

Turning now to FIG. 1, a system 100, for mitigating residue buildup during a film deposition process, as described herein, is illustrated. System 100 includes a reactor 102, including a reaction chamber 104 that includes a reaction space 105, a susceptor 106, a gas distribution system 108, a vacuum source 110, a housing 112, one or more heat lamps 114, one or more cooling medium conduits 116, a reflective surface 118, a device to cause movement of a convective medium 120 (e.g., a blower), a temperature measurement device 122, a controller 124, one or more precursor and/or reactant gas sources 138, and one or more carrier and/or purge gas sources 140. As set forth in more detail below, system 100 can be used to deposit films onto one or more substrates 128, while any residue buildup on an interior surface of reaction chamber 104 is reduced, compared to traditional reactor systems that do not apply the techniques and/or use various devices described herein.

As used in this disclosure, a “substrate” refers to any material having a surface onto which material can be deposited. A substrate can include a bulk material such as silicon (e.g., single crystal silicon, single crystal germanium, or other semiconductor wafer) or may include one or more layers overlying the bulk material. Further, the substrate can include various topologies, such as trenches, vias, lines, and the like formed within or on at least a portion of a layer of the substrate. Exemplary substrates include a silicon wafer onto which an epitaxial layer comprising silicon is grown.

Reactor 102 can be a standalone reactor or part of a cluster tool. Further, reactor 102 can be dedicated to a deposition process as described herein, or reactor 102 can be used for other processes—e.g., for other layer deposition and/or etch processing. For example, reactor 102 can include a reactor typically used for chemical vapor deposition (CVD), such as epitaxial layer deposition. Reactor 102 can include remote or direct thermal excitation, direct plasma, and/or remote plasma apparatus (not illustrated). An exemplary reactor 102 suitable for system 100 is an Intrepid XP Epitaxy System available from ASM International.

In accordance with exemplary embodiments of the disclosure, reaction chamber 104 is formed of material that transmits energy (e.g., radiation) from lamps 114 to reaction space 105 and/or substrate 128. By way of example, reaction chamber 104 is made of quartz or other material that is transparent or translucent to radiation emitted from heat lamps 114. A thickness of a reaction chamber wall 130 can be relatively thin, such that a temperature measurement of an exterior wall surface 131 is indicative (e.g., within about ±5° C.) of a temperature of an interior wall surface 132. A thickness of wall 130 can range from, for example, about 2 mm to about 12 mm, about 3 mm to about 9 mm, or be about 6 mm.

Susceptor 106 is designed to hold substrate or workpiece 128 in place during processing. In accordance with various exemplary embodiments, susceptor 106 forms part of a direct plasma circuit. Additionally or alternatively, susceptor 106 may be heated, cooled, or be at ambient process temperature during processing. In the illustrated example, susceptor 106 includes heating elements 134 and temperature measurement devices (e.g., thermocouples) 136. Heating elements 134 and temperature measurement devices 136, along with controller 124, can be used for additional closed-loop control of susceptor 106 and/or substrate 128.

Heat lamps 114 can include any lamp suitable for heating reaction space 105 to a desired temperature. By way of example, heat lamps 114 include halogen lamps with tungsten filaments. As set forth in more detail below in connection with the discussion of FIG. 3, heat lamps 114 can be configured to heat region 141 to about 550° C. to about 590° C., to mitigate film formation on interior wall surface 132.

Cooling medium conduits 116 and cooling medium therein can be used to cool housing 112 and/or a convective medium (e.g., air) that, in turn, is used to cool exterior wall surface 131. Cooling medium conduits 116 can include any suitable conduit configuration that allows a cooling medium to flow therethrough. By way of example, cooling medium conduits 116 include metal (e.g., stainless steel, brass, or copper) pipes. An exemplary cooling medium is chilled water (e.g., water having a temperature of about 15° C. to about 24° C.) that is chilled using a chiller 126. Chiller 126 can be coupled to controller 124 to provide additional control of a temperature of exterior wall surface 131. Chiller 126 can include any suitable device/chiller to cool the cooling medium.

In the illustrative example, reactor 102 includes a reflective surface 118. Reflective surface 118 can be used to increase a heating efficiency of heat lamps 114 by reflecting radiation emitted from heat lamps 114 into reaction space 105. By way of example, reflective surface can be formed of gold-coated brass material or other suitably reflective material.

Housing 112 encases reactor 102. Housing 112 can be formed of any suitable material, such as a metal, such as aluminum. Cooling medium that flows within cooling medium conduits can be used to keep housing 112 relatively cool, compared to a temperature (e.g., a deposition process temperature of exterior wall surface 131) of reactor 102.

As illustrated, a region 141 is formed between exterior wall surface 131 and an interior housing surface 142. In accordance with various embodiments of the disclosure, a convective medium, such as air, flows within region 141, between cooling medium conduits 116 and exterior wall surface 131 to cool exterior wall surface 131.

Device 120 can be used to control a flow rate of the convective medium in region 141. As illustrated, device 120 is connected to controller 124, which in turn in connected to temperature measurement device 122; this allows closed-loop temperature control of exterior wall surface 131 based on a measured temperature of exterior wall surface 131. The inventors found that by controlling a measured temperature of exterior wall surface 131, formation of residue on interior wall surface 132 is significantly reduced, such that a large number of process runs can be performed without requiring an etch process to clean interior wall surface 132. By way of examples, more than 10, 15, 20, or 25 single wafer runs can be performed without an intervening etch process, whereas with a typical deposition process, an etch process is performed after each run/substrate. This can result in, for example, an increase from about 6.1 to about 8.4 or about 10.4 substrates per hour or a throughput increase of about 40% to about 80%.

In accordance with various embodiments of the disclosure, temperature measurement device 122 is a remote thermometer, such as a pyrometer, that can be used to measure a temperature of exterior wall surface 131. By way of particular examples, temperature measurement device 122 is a pyrometer that measures irradiance from exterior wall surface 131. In accordance with exemplary aspects of the disclosure, temperature measurement device 122 measures irradiance having a wavelength of 4.9 to about 5.2 microns. At this range of wavelengths the quartz is ≥90% opaque, and therefore free of the noise from any transmitted or reflected stray light. Hence, the measured temperature is representative of the temperature of the exterior wall.

In the illustrated example, system 100 includes a shield 139 to facilitate accurate temperature readings of exterior wall surface 131 using temperature measurement device 122. Shield 139 can be formed of a metal, such as aluminum (e.g., an aluminum tube) that is coated with material that is relatively non-reflective, such as an anodized coating. Shield 139 can extend from a top surface of housing 144 to reflective surface 118. In one example, shield 139 rests on reflective surface 118.

Gas distribution system 108 is illustrated in block form; however, gas distribution system 108 may be relatively complex and be designed to mix vapor or gas from one or more precursor/reactant sources 138 and/or one or more carrier/purge gas sources 140 prior to distributing the gas mixture to reaction space 105. Further, system 100 may be configured to provide horizontal (as illustrated) or vertical flow of gasses to reaction space 105.

Reactant/precursor gas source 138 includes one or more gases, or materials that become gaseous. Exemplary reactant and/or precursor gasses include various species of silanes and chlorosilanes such as silane, disilane, trisilane, dichlorosilanes, trichlorosilanes, and methylsilanes, as well as etchant gasses such as hydrogen chloride, and chlorine. Gas from reactant/precursor source 138 may be exposed to a thermal and/or remote plasma and/or direct plasma source to form activated or excited species, such as ions and/or radicals. The term “activated species” includes the precursor/reactant and any ions and/or radicals that may form during exposure of the precursor to any thermal and/or plasma process. Further, the term “chemistry,” when used in connection with a compound, includes the compound and any activated specie(s), whether or not the compound (e.g., a reactant and/or precursor) has been exposed to thermal or plasma activation.

Carrier or inert source 140 includes one or more gases, or materials that become gaseous, that are relatively unreactive in reactor 102. Exemplary carrier and inert gasses include nitrogen, hydrogen, argon, helium, and any combinations thereof.

Controller 124 is coupled to temperature measurement device 122 and device 120. In accordance with various examples of the disclosure, controller 124 is configured to receive a signal from temperature measurement device 122 and to send a signal to device 120 or a variable frequency drive to alter a speed of the device (e.g., a speed of the fan) to thereby control a rate of convective medium flow over exterior wall surface 131 to control a temperature of exterior wall surface 131. The variable frequency drive can form part of controller 124, part of device 120, or can be a stand-alone device.

FIG. 11 schematically illustrates a controller 1300, suitable for use as controller 124, in accordance with at least one embodiment of the disclosure. Controller 1300 can be configured to perform one or more or all method steps of a method described herein. Controller 1300 includes a bus 1302 interconnecting a processor 1304, a memory 1306, an optional communication interface 1308, an input device 1310, and an output device 1312. Bus 1302 enables communication among the components of controller 1300. Processor 1304 can include one or more processing units or microprocessors that interpret and execute coded instructions. In other implementations, processor 1304 can be implemented by or include one or more application-specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), or the like.

Memory 1306 can include a random access memory (RAM) or another type of dynamic storage device that stores information and instructions for execution by the processor 1304. Memory 1306 can also include a read-only memory (ROM) or another type of static storage device that stores static information and instructions for processor 1304. Memory 1306 can additionally or alternatively include other types of magnetic or optical recording medium and its corresponding drive for storing information and/or instructions. As used herein, the term “memory” is broadly used to include registers, buffers, and other data constructs configured to hold data.

Communication interface 1308 can include protocol stacks for processing data transmitted via a data protocol now known or to be developed. Communication interface 1308 can include transceiver-like devices and antenna that enables controller 1300 to communicate radio frequency with other devices and/or systems. Communication interface 1308 can additionally or alternatively include interfaces, ports, or connectors to other devices.

Input 1310 can include one or more devices that permit an operator to enter information to controller 1300, such as a keyboard, a keypad, a mouse, a pen, a touch-sensitive pad or screen, a microphone, one or more biometric mechanisms, and the like. Output 1312 can include one or more devices that outputs information to the operator, such as a display, a printer port, a speaker, or the like.

As described herein, controller 1300 can perform certain operations in response to processor 1304 executing software instructions contained in a computer-readable medium, such as memory 1306. A computer-readable medium may be defined as a physical or logical memory device. A logical memory device can include memory space within a single physical memory device or spread across multiple physical memory devices. The software instructions can be read into memory 1306 from another computer-readable medium or from another device via a communication interface 1308. The software instructions contained in memory 1306 can cause processor 1304 to perform processes/methods described herein. Alternatively, hardwired circuitry can be used in place of or in combination with software instructions to implement processes described herein. Thus, implementations described herein are not limited to any specific combination of hardware circuitry and software.

FIG. 2 illustrates operation of system 100 and an example of how controller 124 can be used to regulate a temperature of exterior wall surface 131. In step 202, a temperature of exterior wall surface 131 is measured, using, for example, temperature measurement device 122 (e.g., a pyrometer). A signal indicative of the temperature of exterior wall surface 131 can be converted from an analog value to a digital value (e.g., using temperature measurement device 122, controller 124, or another device) at step 204. Then, the variable frequency device can be used to adjust (e.g., using proportional-integral-derivative (PID) control) the speed (e.g., fan or blower speed) of device 120 (step 206) and the device speed is accordingly adjusted (step 208), which can result in a temperature change in exterior wall surface (step 210). This process 200 can be repeated as desired. For example, temperature measurements and device speed adjustments can be made at a periodic rate, such as at about every 0.1 to about 100 seconds or about 0.1 to about 0.5 seconds.

In accordance with various embodiments of the disclosure, a method of depositing a material onto a substrate includes providing a deposition reactor (e.g., reactor 102) comprising a reaction chamber (e.g., reaction chamber 104) comprising a wall having an interior wall surface adjacent a reaction space and an exterior wall surface, measuring a temperature of the exterior wall surface using, e.g., a pyrometer, and adjusting a temperature of the exterior wall surface based on a temperature measured during the step of measuring. As noted below, the method can be used to mitigate or eliminate etch processes used to clean the interior wall surface of the reaction chamber and thereby increase the throughput of the reactor. In accordance with additional exemplary embodiments of the disclosure, a method of depositing a material on a surface of substrate within a deposition reaction chamber includes the steps of: providing a deposition reactor comprising a reaction chamber comprising a wall, having an interior wall surface adjacent a reaction space and an exterior wall surface, a housing, and a region between the exterior wall surface and the housing, measuring a temperature of the exterior wall surface, and based on the step of measuring, adjusting a flow rate of a convective medium within the region or otherwise controlling a temperature of the exterior wall surface.

FIGS. 3-10 illustrate film thickness measurements on a substrate under various conditions. As illustrated below, variation of film thickness from run-to-run can be significantly reduced by controlling a temperature of an exterior wall surface (e.g., exterior wall surface 131). The illustrated examples below are for epitaxially depositing or growing a layer comprising silicon using dichlorosilane. However, unless otherwise noted, the disclosure is not limited to such films or precursors. The operating pressure for the examples discuss below is about 10 Torr to about 15 Torr.

FIG. 3 illustrates a mean thickness delta: the mean film thickness of a 25^(th) substrate minus the mean film thickness of a first substrate. The dashed lines represent a 95% confidence value for the data. As illustrated, the mean thickness delta minimum in this example is in a temperature range of about 565° C. to about 610° C. Accordingly, in accordance with some aspects of the disclosure, a method of depositing a material onto a substrate using dichlorosilanes includes controlling a temperature to about 565° C. to about 610° C., about 570° C. to about 600° C., or about 575° C. to about 595° C., or about 560° C. to about 600° C.

FIG. 4 illustrates film thickness measurements in Angstroms (vertical axis) for substrates (1, 2, 3, 4, 5, 10, 15, 20, and 25) with an exterior wall surface temperature controlled at 590° C.±about 5° C. As illustrated, very little change in film thickness measurements is observed between the substrates. In addition, no distortion in the measured film thickness is observed among the substrates.

FIGS. 5 and 6 illustrate film thickness measurements for 25 substrates at 540° C. and 570° C., and FIG. 8 illustrates mean film thickness measurement values at 540° C. (1004) and 570° C. (1002), indicating less upward drift for substrates processed at 570° C., compared to substrates processed at 540° C.

FIG. 7 illustrates film thickness measurements for substrates (each represented by a line in the figure) at various locations on each substrate when a device (e.g., blower) speed is set to a predetermined value (85% speed in FIG. 7)], but the exterior wall surface temperature is not controlled, and when no intervening etch is performed. FIGS. 9 and 10 illustrate similar film thickness measurements for substrates processed in accordance with exemplary embodiments of the disclosure. In particular, FIG. 9 illustrates film thickness measurements of films deposited when an exterior wall surface temperature is controlled at about 540° C. and FIG. 10 illustrates film thickness measurements of films deposited when an exterior wall surface temperature is controlled at about 570° C. The figures illustrate that the film thickness variation is greater when the exterior wall surface temperature is not controlled and all other factors being the same—to the extent such factors are controlled. And, film thickness variation is less for substrates processed at 590° C. and 570° C., compared to substrates processed at 540° C.

Although exemplary embodiments of the present disclosure are set forth herein, it should be appreciated that the disclosure is not so limited. For example, although the systems and methods are described in connection with various specific chemistries, the disclosure is not necessarily limited to these chemistries. Various modifications, variations, and enhancements of the systems and methods set forth herein can be made without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A method of depositing a material onto a substrate, the method comprising the steps of: providing a deposition reactor comprising a reaction chamber comprising a wall having an interior wall surface adjacent a reaction space and an exterior wall surface; measuring a temperature of the exterior wall surface using a pyrometer; and adjusting a temperature of the exterior wall surface based on a temperature measured during the step of measuring.
 2. The method of claim 1, wherein the step of adjusting a temperature comprises using convective heat transfer.
 3. The method of claim 1, wherein the step of adjusting a temperature comprises adjusting a flow rate of a convective medium adjacent the exterior wall surface.
 4. The method of claim 1, wherein the step of adjusting a temperature comprises adjusting a blower speed.
 5. The method of claim 1, wherein the wall comprises quartz.
 6. The method of claim 1, wherein a thickness of the wall ranges from about 2 mm to about 12 mm.
 7. The method of claim 1, wherein a thickness of the wall ranges from about 3 mm to about 9 mm.
 8. The method of claim 1, wherein the material comprises silicon.
 9. The method of claim 1, wherein a precursor used to deposit the material comprises one or more chlorosilanes.
 10. The method of claim 1, wherein the method further comprises the step of depositing the material onto the substrate using dichlorosilanes.
 11. The method of claim 1, wherein the method further comprises the step of controlling a temperature of the wall to a temperature between about 560° C. and 600° C.
 12. The method of claim 1, wherein the method further comprises the step of controlling a temperature of the wall between about 575° C. and 595° C.
 13. A method depositing a material on a substrate within a deposition reaction chamber, the method comprising the steps of: providing a deposition reactor comprising a reaction chamber comprising a wall, having an interior wall surface adjacent a reaction space and an exterior wall surface, a housing, and a region between the exterior wall surface and the housing; measuring a temperature of the exterior wall surface; and based on the step of measuring, adjusting a flowrate of a convective medium within the region to control a temperature of the exterior wall surface.
 14. The method of claim 13, further comprising a step of controlling a temperature of a susceptor within the reaction chamber.
 15. The method of claim 13, wherein the material comprises silicon.
 16. The method of claim 13, wherein a precursor used to deposit the material comprises a chlorosilane.
 17. The method of claim 13, further comprising a step of controlling a temperature of the wall to a temperature between about 560° C. and 600° C.
 18. The method of claim 13, wherein the method further comprises the step of controlling a temperature of the wall between about 575° C. and 595° C.
 19. The method of claim 13, wherein the method further comprises the step of depositing the material onto the substrate using dichlorosilanes.
 20. A method of depositing a material onto a substrate, the method comprising the steps of: providing a deposition reactor comprising a reaction chamber comprising a wall having an interior wall surface adjacent a reaction space and an exterior wall surface; depositing the material onto the substrate using dichlorosilanes; measuring a temperature of the exterior wall surface using a pyrometer; adjusting a temperature of the exterior wall surface based on a temperature measured during the step of measuring; and controlling a temperature of the wall to a temperature between about 560° C. and 600° C. 